| Package | Bulk |
|---|
| Series | - |
|---|
| ProductStatus | Obsolete |
|---|
| FETType | N-Channel |
|---|
| Technology | SiCFET (Silicon Carbide) |
|---|
| DraintoSourceVoltage(Vdss) | 1200 V |
|---|
| Current-ContinuousDrain(Id)@25°C | 25A (Tc) |
|---|
| DriveVoltage(MaxRdsOn | 20V |
|---|
| MinRdsOn) | 175mOhm @ 10A, 20V |
|---|
| RdsOn(Max)@Id | 2.5V @ 1mA |
|---|
| Vgs | 72 nC @ 20 V |
|---|
| Vgs(th)(Max)@Id | +25V, -10V |
|---|
| Vgs(Max) | - |
|---|
| InputCapacitance(Ciss)(Max)@Vds | - |
|---|
| FETFeature | 175W (Tc) |
|---|
| PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
|---|
| OperatingTemperature | - |
|---|
| MountingType | - |
|---|
| SupplierDevicePackage | Through Hole |
|---|
| Package/Case | TO-247 |
|---|
| GateCharge(Qg)(Max)@Vgs | TO-247-3 |
|---|
| Grade | |
|---|
| Qualification | |
|---|
